参数资料
型号: 2SK359D
元件分类: 小信号晶体管
英文描述: RF SMALL SIGNAL, FET, TO-92
封装: TO-92(2), 3 PIN
文件页数: 2/7页
文件大小: 29K
代理商: 2SK359D
2SK359
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSX*
1
20
V
Gate to source voltage
V
GSS
±5V
Drain current
I
D
30
mA
Gate current
I
G
±1mA
Channel power dissipation
Pch
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. V
GS = –4 V
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
20
V
I
D = 100 A, VGS = –4 V
Gate cutoff current
I
GSS
——
±20
nA
V
GS = ±5 V, VDS = 0
Drain current
I
DSS*
1
4
12
mA
V
DS = 10 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
0
–2.0
V
DS = 10 V, ID = 10 A
Forward transfer admittance
fs
y
8
14
mS
V
DS = 10 V, VGS = 0,
f = 1 kHz
Input capacitance
Ciss
2.5
pF
V
DS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Coss
1.6
pF
Reverse transfer capacitance
Crss
0.03
pF
Power gain
PG
30
dB
V
DS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
2
dB
Note:
1. The 2SK359 is grouped by I
DSS as follows.
DE
F
4 to 8
6 to 10
8 to 12
相关PDF资料
PDF描述
2SK359F RF SMALL SIGNAL, FET, TO-92
2SK359D RF SMALL SIGNAL, FET, TO-92
2SK359 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92
2SK359-D VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92
2SK360IGFTL-E VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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