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参数资料
| 型号： | 2SK360F |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF SMALL SIGNAL, FET |
| 封装： | MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SK360F |
2SK360
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSX*
1
20
V
Gate to source voltage
V
GSS
±5V
Drain current
I
D
30
mA
Gate current
I
G
±1mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. V
GS = –4 V
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
20
—
V
I
D = 100 A, VGS = –4 V
Gate cutoff current
I
GSS
——
±20
nA
V
GS = ±5 V, VDS = 0
Drain current
I
DSS*
1
4
—
12
mA
V
DS = 10 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
0
—
–2.0
V
DS = 10 V, ID = 10 A
Forward transfer admittance
fs
y
8
14
—
mS
V
DS = 10 V, VGS = 0,
f = 1 kHz
Input capacitance
Ciss
—
2.5
—
pF
V
DS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Coss
—
1.6
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
Power gain
PG
—
30
—
dB
V
DS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
2.0
—
dB
Note:
1. The 2SK360 is grouped by I
DSS as follows.
Grade
D
E
F
Mark
IGD
IGE
IGF
I
DSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK360-F | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK360IGETL | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK360IGFTL | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK360IGETL-E | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3615 | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK360IGETL | 制造商:Hitachi 功能描述:VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3610-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3611-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3614-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 4A SOT89 |
| 2SK3615-TL-E | 制造商:SANYO 功能描述:Nch 60V 12A 0.06 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 12A TO-251 |
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