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参数资料
| 型号： | 2SK360IGETL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | SC-59, MPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 68K |
| 代理商： | 2SK360IGETL |
2SK360
Rev.2.00, Aug 10.2005, page 3 of 5
10
2468
Drain to Source Voltage VDS (V)
0
10
8
6
4
2
Typical Output Characteristics
Drain
Current
I
D
(mA)
VGS = 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–2.0
–1.6
–1.2
–0.8
–0.4
0
Gate to Source Voltage VGS (V)
10.0
8.0
6.0
4.0
2.0
0
Typical Transfer Characteristics
Drain
Current
I
D
(mA)
VDS = 10 V
F
E
610
48
2
Drain to Source Voltage VDS (V)
0
20
16
12
8
4
Forward Transfer Admittance vs.
Drain to Source Voltage
Forward
Transfer
Admittance
y
fs
(mS)
VGS = 0
f = 1 kHz
0.5
2
20
1.0
10
5
0.2
Drain Current ID (mA)
100
50
20
10
5
2
1
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
y
fs
(mS)
VDS = 10 V
f = 1 kHz
210
20
5
1.0
0.5
Drain to Source Voltage VDS (V)
20
10
5
2
1.0
0.5
Input Capacitance vs.
Drain to Source Voltage
Input
Capacitance
C
iss
(pF)
VGS = 0
f = 1 MHz
Maximum Channel Dissipation Curve
Ambient Temperature Ta (
°C)
Channel
Power
Dissipation
P
ch
(mW)
100
150
50
0
50
100
150
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK360IGFTL | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK360IGETL-E | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3615 | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3615-TL | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3618 | 8000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3610-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3611-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3614-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 4A SOT89 |
| 2SK3615-TL-E | 制造商:SANYO 功能描述:Nch 60V 12A 0.06 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 12A TO-251 |
| 2SK3617-TL-E | 制造商:SANYO 功能描述:Nch 100V 6A 0.225 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH100V6ATO-252 制造商:Sanyo 功能描述:0 |
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