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参数资料
| 型号： | 2SK360IGFTL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | SC-59, MPAK-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 185K |
| 代理商： | 2SK360IGFTL |
2SK360
Rev.2.00, Aug 10.2005, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSX*
1
20
V
Gate to source voltage
VGSS
±5
V
Drain current
ID
30
mA
Gate current
IG
±1
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. VGS = –4 V
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSX
20
—
V
ID = 100
A, VGS = –4 V
Gate cutoff current
IGSS
—
±20
nA
VGS = ±5 V, VDS = 0
Drain current
IDSS *
1
6
—
12
mA
VDS = 10 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0
—
–2.0
V
VDS = 10 V, ID = 10
A
Forward transfer admittance
|yfs|
8
14
—
mS
VDS = 10 V, VGS = 0,
f = 1 kHz
Input capacitance
Ciss
—
2.5
—
pF
Output capacitance
Coss
—
1.6
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Power gain
PG
—
30
—
dB
Noise figure
NF
—
2.0
—
dB
VDS = 10 V, VGS = 0,
f = 100 MHz
Note:
1. The 2SK360 is grouped by IDSS as follows.
Grade
E
F
Mark
IGE
IGF
IDSS
6 to 10
8 to 12
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PDF描述 |
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| 2SK360IGETL | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3610-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3611-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3614-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 4A SOT89 |
| 2SK3615-TL-E | 制造商:SANYO 功能描述:Nch 60V 12A 0.06 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 12A TO-251 |
| 2SK3617-TL-E | 制造商:SANYO 功能描述:Nch 100V 6A 0.225 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH100V6ATO-252 制造商:Sanyo 功能描述:0 |
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