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参数资料
| 型号： | 2SK3612-01L |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 243K |
| 代理商： | 2SK3612-01L |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250
VDSX *5
220
Continuous drain current
ID
±14
Pulsed drain current
ID(puls]
±56
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
14
Maximum Avalanche Energy
EAS *1
129.1
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD Ta=25°C
2.02
Tc=25°C
105
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3612-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=5A
VGS=10V
ID=5A
VDS=25V
VCC=48V ID=5A
VGS=10V
RGS=10
Ω
Min.
Typ.
Max.
Units
V
μA
nA
m
Ω
S
pF
nC
A
V
μs
μC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.191
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=125V
ID=10A
VGS=10V
L=1.11mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/μs Tch=25°C
V
A
V
A
mJ
kV/μs
W
°C
250
3.0
5.0
25
250
10
100
200
260
510
785
1178
88
132
46
12
18
2.7
4.1
22
33
7.4
11.1
21
31.5
812
5
7.5
14
1.10
1.65
0.155
1.05
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*4 VDS
250V
<=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
200304
*1 L=1.11mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
P4
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