参数资料
型号: 2SK3625(2-10S1B)
元件分类: JFETs
英文描述: 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, 2-10S1B, 3 PIN
文件页数: 4/6页
文件大小: 326K
代理商: 2SK3625(2-10S1B)
2SK3625
2009-09-29
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-
sou
rce
on
re
sis
tan
ce
R
DS
(ON)
(
m
Ω
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc (°C)
Vth – Tc
Case temperature Tc (°C)
PD – Tc
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-
sou
rce
volt
ag
e
V
DS
(V)
0
40
80
120
160
80
40
0
40
80
120
160
Common source
VGS = 10 V
Pulse test
ID = 25 A
12
6
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Common source
Tc
= 25°C
Pulse test
VGS = 0 V
1
3
5
10
0.1
1
10
100
1000
10000
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
3
0
80
40
0
40
120
160
80
1
2
5
6
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
200
0
160
120
80
40
0
20
40
60
80
100
4
8
12
16
20
Common source
ID = 25 A
Tc
= 25°C
Pulse test
VDS = 40 V
80
160
VDS
VGS
40
80
10
0
40
80
120
200
120
160
200
相关PDF资料
PDF描述
2SK3625(2-10S2B) 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3635-Z 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3635 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK3635-AZ 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK3639-ZK 64000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
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