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参数资料
| 型号： | 2SK3625(2-10S2B) |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-10S2B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 326K |
| 代理商： | 2SK3625(2-10S2B) |
2SK3625
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
—
5.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 12.5 A
—
65
82
ｍ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 12.5A
5
10
—
S
Input capacitance
Ciss
—
2080
—
Reverse transfer capacitance
Crss
—
280
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1060
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
40
—
Fall time
tf
—
10
—
Switching time
Turnoff time
toff
—
40
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
44
—
Gatesource charge
Qgs
—
21
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 160 V, VGS = 10 V, ID = 25 A
—
23
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
25
A
Pulse drain reverse current
(Note 1)
IDRP
—
100
A
Forward voltage (diode)
VDSF
IDR = 25 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
290
—
ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
2.2
—
μC
Marking
0 V
10 V
VGS
VDD 100V
ID = 12.5 A
VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
RL = 8 Ω
Lot No.
Note 4
K3625
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相关代理商/技术参数 |
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| 2SK362-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH Si 3-Pin TO-92 |
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