- 您现在的位置：买卖IC网 > PDF目录33502 > 2SK3635-Z-AZ 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 PDF资料下载
参数资料
| 型号： | 2SK3635-Z-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 39K |
| 代理商： | 2SK3635-Z-AZ |
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3635
SWITCHING
N-CHANNEL POWER MOS FET
PRELIMINARY PRODUCT INFORMATION
Document No.
D15932EJ1V0PM00 (1st edition)
Date Published
December 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3635 is N-Channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
High voltage: VDSS = 200 V
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 0.48
MAX. (VGS = 10 V, ID = 4.0 A)
Low Ciss: Ciss = 410 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±8.0
A
Drain Current (pulse)
Note1
ID(pulse)
±32
A
Total Power Dissipation (TC = 25°C)
PT1
23
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
8A
Single Avalanche Energy
Note2
EAS
6.4
mJ
Repetitive Pulse Avalanche Energy
Note2
EAR
2.3
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25
, VGS = 20
→ 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
5.43
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3635
TO-251
2SK3635-Z
TO-252
(TO-251)
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3635 | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3635-Z-AZ | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK3635 | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3635-AZ | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3639-ZK | 64000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK363-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3645-01MRSC | 制造商:Fuji Electric 功能描述: |
发布紧急采购，3分钟左右您将得到回复。