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参数资料
| 型号： | 2SK3646-01L |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 41 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 242K |
| 代理商： | 2SK3646-01L |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
VDSX *5
70
Continuous drain current
ID
±41
Pulsed drain current
ID(puls]
±164
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
41
Maximum Avalanche Energy
EAS *1
204.7
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
150
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3646-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V
ID=15A
VGS=10V
ID=15A
VDS=25V
VCC=48V ID=15A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.833
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=50V
ID=30A
VGS=10V
L=146H Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
100
3.0
5.0
25
250
10
100
34
44
918
1110
1665
280
420
22
33
16
24
23
35
31
47
16
24
32
48
13
20
914
41
1.10
1.65
0.1
0.38
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
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=
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=
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*4 VDS 100V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4
200304
*1 L=146H, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
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