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参数资料
| 型号： | 2SK3653J2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 0814, SOF-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 44K |
| 代理商： | 2SK3653J2 |
Data Sheet D16293EJ1V0DS
3
2SK3653
TYPICAL CHARACTERISTICS (TA = 25°C)
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
TA - Ambient Temperature - C
dT
-
Derating
Factor
-
%
VGS - Gate to Source Voltage - V
IG
-
Gate
Current
-
A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
20
10
40
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
0.6
0.4
0.2
0
+0.2
0.2
0.6
0.4
0.8
1
VDS = 5.0 V
ID
S
=
3
0
A
ID
S
=
2
0
A
ID
S
=
1
0
A
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
VDS - Drain to Source Voltage - V
C
iSS
-
Input
Capacitance
-
pF
10
20
50
100
1
2
5
15
2
VDS = 0 V
f = 1.0 MHz
GATE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE
VOLTAGE DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
V
GS
(off)
-
Gate
Cut-off
Voltage
-
V
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS = 5.0 V
1
0.5
0.2
0.1
0.05
0.02
10
20
50
100
200
500
1000
0.01
5
2
10
VGS (off)
|yfs|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
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