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参数资料
| 型号： | 2SK3668-ZK |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZK, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 82K |
| 代理商： | 2SK3668-ZK |
Data Sheet D16547EJ2V0DS
3
2SK3668
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
e
rc
ent
age
o
fRa
ted
P
o
w
e
r-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
P
T
-
Tot
a
l
P
o
w
e
rDi
s
ipat
ion
-
W
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drai
n
Current
-
A
0.01
0.1
1
10
100
0.1
1
10
100
1000
TC = 25°C
Single pulse
PW = 1 ms
100 ms
10 ms
ID(DC) = 10 A
Power Dissipation Limited
RDS(on) Limited
(at VGS = 10 V)
DC
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R
th
(t
)-
Trans
ie
n
tTher
m
a
lResi
st
anc
e
-
°C/W
0.001
0.01
0.1
1
10
100
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 1.25°C/W
Single pulse
Rth(ch-A): TA = 25°C
Rth(ch-C): TC = 25°C
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-92MOD 封装/外壳:TO-226-3，TO-92-3 长体 标准包装:1 |
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