- 您现在的位置：买卖IC网 > PDF目录30620 > 2SK3669 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3669 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 193K |
| 代理商： | 2SK3669 |
2SK3669
2009-12-21
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive
Applications
Low drain-source ON-resistance: RDS (ON) = 95 m (typ.)
High forward transfer admittance: |Yfs| = 6 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
10
Pulse (tw ≤ 10 ms)
(Note 1)
IDP
15
Drain current
Pulse (tw ≤ 1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
280
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy
(Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C/ W
Thermal resistance, channel to ambient
Rth (cha)
125
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1
± 0.2
0.
1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.
3
1.
2M
A
X
.
1.
5
±
0.
2
6.5
± 0.2
1
2
3
0.6 MAX.
5.
5
±
0.
2
0.6
± 0.15
2.
3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SIN K）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3684-01SJ | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3684-01L | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3686-01 | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK368OTE85L | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK368GRTE85L | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-92MOD 封装/外壳:TO-226-3，TO-92-3 长体 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。