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参数资料
| 型号： | 2SK3676-01SJ |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 266K |
| 代理商： | 2SK3676-01SJ |
1
P4
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900
VDSX *5
900
Continuous drain current
ID
±6
Pulsed drain current
ID(puls]
±24
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
6
Maximum Avalanche Energy
EAS*1
244
Maximum Drain-Source dV/dt
dVDS/dt *4
40
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
195
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3676-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=3A
VDS=25V
VCC=600V ID=3A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.640
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=6A
VGS=10V
L=12.4mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
900
3.0
5.0
25
250
100
1.92
2.50
3.7
7.4
750
1125
100
150
711
21
32
8.0
12
42
63
11
16.5
25
32
3
4.5
7
10.5
6
0.90
1.50
1.1
5.5
-55 to +150
Outline Drawings
[mm]
*3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150°C
<
<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
VGS=10V
200304
*4 VDS 900V
*5 VGS=-30V
=
<
*1 L=12.4mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
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相关代理商/技术参数 |
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| 2SK3677-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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