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参数资料
| 型号： | 2SK373-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | 2-5F1C, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 611K |
| 代理商： | 2SK373-GR |
2SK373
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK373
For Audio, High Voltage Amplifier and Constant Current
Applications
High breakdown voltage: VGDS = 100 V (min)
High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
100
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 80 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
100
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.6
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.4
3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4.6
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF
VDS = 10 V, VGS = 0, RG = 100 kΩ,
f
= 100 Hz
0.5
dB
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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