参数资料
型号: 2SK3742
元件分类: JFETs
英文描述: Si, POWER, FET
封装: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件页数: 2/6页
文件大小: 221K
代理商: 2SK3742
2SK3742
2005-01-24
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG =±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
4.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
2.2
2.5
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3 A
1.5
3.5
S
Input capacitance
Ciss
1150
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
100
Turn-on time
ton
140
Fall time
tf
40
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
25
Gate-source charge
Qgs
11
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
14
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
900
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/s
5.4
C
Marking
RL =
66.7
0 V
10 V
VGS
VDD 200 V
ID = 3 A
VOUT
50
Duty <= 1%, tw = 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3742
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SK3891-01R 17 A, 700 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
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