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参数资料
| 型号： | 2SK3757 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 230K |
| 代理商： | 2SK3757 |
2SK3757
2009-09-29
5
rth – tw
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 42.8 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
DR
AIN
CURR
EN
T
I D
(A)
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
A
V
ALANCHE
E
N
E
R
GY
E
AS
(mJ)
PULSE WIDTH tw (S)
NO
RMAL
IZED
TRANS
IE
N
T
H
E
R
M
A
L
IM
PE
DA
NC
E
r th
(t)
/R
th
(ch-c)
DRAIN
SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
EAS – Tch
0.01
0.1
1
3
0.3
0.03
10
μ
100
μ
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 4.17°C/W
Duty
= 0.5
0.2
0.1
SINGLE PULSE
0.05
0.01
0.003
0.02
1
0.03
0.3
3
10
100
1000
VDSS max
1
0.01
0.1
* SINGLE NONPETITIVE PULSE
Tc
= 25°C
Curves must be derated linearly with
increase in temperature
DC OPERATION
Tc
= 25°C
1 ms *
100
μs *
ID max (CONTINUOUS)
ID max (PULSE) *
0
25
40
80
120
200
160
50
75
100
125
150
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
| 2SK3758(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A TO-220AB |
| 2SK3758(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 5A Rdson Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3759 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
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