- 您现在的位置：买卖IC网 > PDF目录30621 > 2SK3822 (SANYO SEMICONDUCTOR CO LTD) 52 A, 100 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3822 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 100 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 40K |
| 代理商： | 2SK3822 |
2SK3822
No.8014-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8014
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000330
2SK3822
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
52
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
208
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
338
mJ
Avalanche Current *2
IAV
52
A
Note : *1 VDD=20V, L=200H, IAV=52A
*2 L
≤200H, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=26A
24
40
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=26A, VGS=10V
19
25
m
RDS(on)2
ID=26A, VGS=4V
23
32
m
Marking : K3822
Continued on next page.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3829 | 48 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3862G-T | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3862G-S | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3863 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3863 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3823 | 功能描述:MOSFET N-CH 60V 40A TO220-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3824 | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3826 | 功能描述:MOSFET N-CH 100V 26A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3827 | 功能描述:MOSFET N-CH 100V 40A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。