参数资料
型号: 2SK3833
元件分类: JFETs
英文描述: 48 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3PB, 3 PIN
文件页数: 3/4页
文件大小: 40K
代理商: 2SK3833
2SK3833
No.8016-3/4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT07723
Case Temperature, Tc --
°C
RDS(on) -- Tc
IT07724
--50
--25
150
0
80
10
20
30
40
50
60
70
030
10
15
20
25
5
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss,
Coss,
Crss
-
pF
IT07728
100
7
1000
10000
IT7727
IT07726
Diode Forward Voltage, VSD -- V
IF -- VSD
Drain Current, ID -- A
IT07725
0.1
1.0
23
5 7
100
7
5
3
2
10
1.0
100
Forward
T
ransfer
Admittance,
y
fs
-
S
yfs -- ID
1.2
0.3
0.6
0.9
0
0.01
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
2
100
5
7
3
2
Forward
Current,
I
F
--
A
7
5
3
5
2
3
2
10
2
3
57
2
3
57
3.0
4.0
5.0
6.0
7.0
8.0
9.0
2.0
10
0
70
20
30
40
50
60
10
0
25
50
75
100
125
010
20
30
40
50
60
70
80
0
2.0
4.0
6.0
8.0
9.0
1.0
3.0
5.0
7.0
10
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source
V
oltage,
V
GS
--
V
VDS=50V
ID=48A
7
5
3
2
ID=24A
Tc=75
°C
25
°C
--25
°C
Tc=
--25
°C
75
°C
25
°C
VDS=10V
Tc
=
75
°C
25
°C
--
25
°C
VGS=0V
f=1MHz
Coss
Ciss
Crss
IT07729
IT07730
2
0.1
23
100
1.0
57
23
10
57
2
3
57
100
1000
10
3
5
7
2
3
5
7
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime,
SW
T
ime
-
ns
0.1
1.0
10
100
3
2
5
7
3
2
5
7
2
3
2
3
5
7
5
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
23
5 7
2
3
5
77
1.0
0.1
10
100
22
3
td(off)
tf
td(on)
tr
VDD=50V
VGS=10V
IDP=192A
ID=48A
100
s
1ms
10ms
100ms
DC
operation
10
s
<10
s
Tc=25
°C
Single pulse
Operation in
this area is
limited by RDS(on).
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
I D
=24A,
V GS
=4V
I D
=24A,
V GS
=10V
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2SK3844(Q) 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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2SK3847(Q) 制造商:Toshiba America Electronic Components 功能描述: