参数资料
型号: 2SK3857TV-A
元件分类: 小信号晶体管
英文描述: 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: LEAD FREE, 2-1H1A, VESM2, 3 PIN
文件页数: 1/4页
文件大小: 335K
代理商: 2SK3857TV-A
2SK3857TV
2006-03-02
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK3857TV
For ECM
Application for Ultra-compact ECM
Lead(Pb)-free
Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
IDSS CLASSIFICATION
A-Rank
140~240A
B-Rank
210~350A
Marking
Equivalent Circuit
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use
it as a terminal.
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1H1A
Weight: 0.8mg (typ.)
VESM2
1.Drain
2.Source
3.Gate
1.2±0.05
0.8±0.05
1.
0.
0
5
0.
8
±
0.
1
0
.3±
0.
05
1
2
3
0.4
0.
4
0.
2
±
0.
0
5
0.
2
8
±
0
.0
2
0.09
±
0
.0
3
Type Name
Top Gate
IDSS Classification Symbol
A :A-Rank
B :B-Rank
9
Lot Code
D
G
S
相关PDF资料
PDF描述
2SK3889-01L 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
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2SK3977-TL 10000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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