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参数资料
| 型号： | 2SK3868 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 209K |
| 代理商： | 2SK3868 |
2SK3868
2009-09-29
4
1
0.1
10
100
1000
10000
1
10
100
Ciss
Coss
Crss
DRAIN-SOURCE VOLTAGE VDS (V)
CAP
A
CIT
A
N
CE
C
(pF)
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
0
0.1
0.8
0.3
0.5
1
3
5
10
1.2
2.0
1.6
VGS = 0, 1,1 V
10
3
0.4
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN
REVERS
E
CURRENT
I DR
(A)
COMMON SOURCE
Tc
= 25°C
PULSE TEST
0
1
2
3
5
80
40
0
40
80
120
160
4
G
A
TE
THRESHO
LD
V
O
LT
AG
E
V
th
(V)
CASE TEMPERATURE Tc (°C)
Vth – Tc
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
DRAIN-S
OUR
C
E
ON
RESIS
TAN
CE
R
DS
(
O
N
)
(
Ω
)
DRAIN
POWE
R
DISSIP
A
T
IO
N
P
D
(W
)
CASE TEMPERATURE Tc (°C)
50
20
0
40
80
120
160
10
30
40
200
DRAIN-S
O
U
RCE
VO
LT
AG
E
V
DS
(V)
0
5
10
VDD = 100 V
VDS
VGS
400
200
15
25
500
200
0
100
300
400
20
8
0
4
12
16
G
A
TE
-SO
U
RCE
VO
LT
AG
E
V
GS
(V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = 5 A
Tc
= 25°C
PULSE TEST
IDR – VDS
CAPACITANCE – VDS
PD – Tc
160
40
80
5
4
3
2
1
0
ID = 5 A
1.2
2.5
COMMON SOURCE
VGS = 10 V
PULSE TEST
0
120
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3869 | 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3904 | 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3919-AZ | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3868(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS |
| 2SK3868(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3869 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS |
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
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