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参数资料
| 型号： | 2SK3904 |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 253K |
| 代理商： | 2SK3904 |
2SK3904
2005-01-24
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 9.5 A
0.2
0.26
Forward transfer admittance
Yfs
VDS = 10 V, ID = 9.5 A
2.6
9.5
S
Input capacitance
Ciss
3100
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
270
pF
Rise time
tr
70
Turn-on time
ton
130
Fall time
tf
70
Switching time
Turn-off time
toff
280
ns
Total gate charge
(gate-source plus gate-drain)
Qg
62
Gate-source charge
Qgs
40
Gate-drain (“Miller”) charge
Qgd
VDD 360 V, VGS = 10 V, ID = 19 A
22
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
19
A
Pulse drain reverse current
(Note 1)
IDRP
76
A
Forward voltage (diode)
VDSF
IDR = 19 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1300
s
Reverse recovery charge
Qrr
IDR = 19 A, VGS = 0 V,
dIDR/dt = 100 A/s
18
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 21
VDD 200 V
ID = 9.5 A
VOUT
50
K3904
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3919-AZ | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919 | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3919-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3920-01 | 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3927-01SJ | 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3904(F) | 制造商:Toshiba 功能描述:Nch 450V 19A 0.26@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 450V 19A 0.26@10V TO3P(N) Bulk |
| 2SK3905(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3906(Q) | 功能描述:MOSFET MOSFET N-Ch 600V 20A Rdson=0.33Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3907(Q) | 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3911(Q) | 制造商:Toshiba 功能描述:Nch 600V 20A 0.32@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 20A TO-3PN |
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