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参数资料
| 型号： | 2SK3919-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 166K |
| 代理商： | 2SK3919-AZ |
Data Sheet D17078EJ2V0DS
2
2SK3919
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
2.5
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 16 A
9.7
19
S
RDS(on)1
VGS = 10 V, ID = 32 A
4.5
5.6
m
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 5.0 V, ID = 16 A
6.8
13.7
m
Input Capacitance
Ciss
2050
pF
Output Capacitance
Coss
460
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
330
pF
Turn-on Delay Time
td(on)
16
ns
Rise Time
tr
19
ns
Turn-off Delay Time
td(off)
53
ns
Fall Time
tf
VDD = 12.5 V, ID = 32 A
VGS = 10 V
RG = 10
22
ns
Total Gate Charge
QG
42
nC
Gate to Source Charge
QGS
8
nC
Gate to Drain Charge
QGD
VDD = 20 V
VGS = 10 V
ID = 64 A
15
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 64 A, VGS = 0 V
0.97
V
Reverse Recovery Time
trr
IF = 64 A, VGS = 0 V
23
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
11
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
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