参数资料
型号: 2SK3919-ZK
元件分类: 小信号晶体管
英文描述: 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: TO-252, MP-3Z, 3 PIN
文件页数: 5/8页
文件大小: 166K
代理商: 2SK3919-ZK
Data Sheet D17078EJ2V0DS
5
2SK3919
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
2
4
6
8
10
-100
-50
0
50
100
150
200
ID = 32 A
Pulsed
VGS = 10 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
100
1000
10000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,t
d(
off)
,t
f-
Swi
tching
Time
-ns
1
10
100
1000
0.1
1
10
100
tr
td(off)
td(on)
tf
VDD = 12.5 V
VGS = 10 V
RG = 10
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
5
10
15
20
25
30
020
40
0
2
4
6
8
10
12
VDS
VDD = 20 V
12.5 V
5 V
ID = 64 A, 42 A (at VDD = 5 V)
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
00.511.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
ers
eRec
ov
ery
Ti
me
-ns
1
10
100
1000
1
10
100
di/dt = 100 A/
s
VGS = 0 V
IF - Diode Forward Current - A
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