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参数资料
| 型号： | 2SK3920-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 172K |
| 代理商： | 2SK3920-01 |
3
2SK3920-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VG
S
(t
h)
[V
]
Tch [°C]
0
10
203040
506070
8090
0
2
4
6
8
10
12
14
Vcc=60V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=67A,Tch=25°C
V
G
S
[V
]
10
0
10
1
10
2
10
1
10
2
10
3
C
[p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25°C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[ns
]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
I
AS=27A
I
AS=41A
I
AS=67A
EA
V
[mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A
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PDF描述 |
|---|---|
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| 2SK3930-01L | 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
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