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参数资料
型号： 2SK3921-01S
厂商： FUJI ELECTRIC CO LTD
元件分类： JFETs
英文描述： 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： TPACK-3
文件页数： 1/4页
文件大小： 229K
代理商： 2SK3921-01S
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
120
VDSX
90
Continuous drain current
ID
67
Pulsed drain current
ID(puls]
±268
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
67
Non-repetitive
Maximum avalanche energy
EAS
719.1
Repetitive
Maximum avalanche energy
27.0
Maximum drain-source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
Maximum power dissipation
PD
2.02
270
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3921-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=120V VGS=0V
VDS=96V
VGS=0V
VGS=±30V
ID=33.5A
VGS=10V
ID=33.5A
VDS=25V
VCC=48V ID=33.5A
VGS=10V
RGS=10
Ω
V
μA
nA
m
Ω
S
pF
nC
V
ns
μC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
62.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=60V
ID=67A
VGS=10V
IF=67A VGS=0V Tch=25°C
IF=67A VGS=0V
-di/dt=100A/μs Tch=25°C
V
A
V
A
mJ
kV/μs
W
°C
120
3.0
5.0
25
250
100
24.6
30.0
14
28
1880
2820
360
540
30
45
20
30
35
53
50
75
23
35
52
78
16
24
18
27
1.10
1.50
150
0.9
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200509
=
<
VGS=-30V
Note *1
Note *2
Note *3
VDS 120V
Note *4
Ta=25°C
Tc=25°C
=
<
=
<
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50
Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
<
=
<
See to P4
=
<
Min.
Typ.
Max.
Units
http://www.fujielectric.co.jp/fdt/scd/
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