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参数资料
| 型号： | 2SK3946 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 24K |
| 代理商： | 2SK3946 |
2SK3946
No. A0153-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0153
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2505GB MS IM TB-00001208
2SK3946
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
Small IGSS.
Large gm.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
30
V
Gate-to-Drain Voltage
VGDS
--30
V
Gate Current
IG
10
mA
Drain Current
ID
10
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0V
--30
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1A
--0.18
--0.7
--1.1
V
Drain Current
IDSS
VDS=10V, VGS=0V
2
7
mA
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
7.5
12
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
9.5
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
2.5
pF
Marking : KF
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PDF描述 |
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| 2SK3948G | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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| 2SK3978 | 4000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3984-ZK | 18000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3947(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS |
| 2SK3977-TL-E | 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0 |
| 2SK3979-TL-E | 制造商:SANYO 功能描述:Nch 200V 6A 450m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 6A TP-FA 制造商:Sanyo 功能描述:0 |
| 2SK3980-TD-E | 制造商:SANYO 功能描述:Nch 60V 0.9A obo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 0.9A SOT89 制造商:Sanyo 功能描述:0 |
| 2SK3984-ZK-E1-AY | 功能描述:MOSFET N-CH 100V 18A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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