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参数资料
| 型号： | 2SK3979TP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 53K |
| 代理商： | 2SK3979TP |
2SK3979
No. A0263-1/4
www.semiconductor-sanyo.com/network
Ordering number : ENA0263A
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SK3979
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
200
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
6A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
24
A
Allowable Power Dissipation
PD
1W
Tc=25°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
200
V
Zero-Gate Voltage Drain Current
IDSS
VDS=200V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±24V, VDS=0V
±1
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.2
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
2.1
3.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3A, VGS=10V
320
450
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
1090
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
85
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
35
pF
Marking : K3979
Continued on next page.
12710 TK IM / 80906 / 12506PA MS IM TB-00001924
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| 2SK3979TP-FA | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2SK3991-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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