参数资料
型号: 2SK3991-ZK-E2-AZ
元件分类: 小信号晶体管
英文描述: 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件页数: 5/10页
文件大小: 274K
代理商: 2SK3991-ZK-E2-AZ
Data Sheet D17434EJ2V0DS
2
2SK3991
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
2.5
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 7.5 A
5
10
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 15 A
10.3
13.0
m
RDS(on)2
VGS = 5.0 V, ID = 15 A
17.4
30.2
m
Input Capacitance
Ciss
VDS = 10 V
830
pF
Output Capacitance
Coss
VGS = 0 V
200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
140
pF
Turn-on Delay Time
td(on)
VDD = 12.5 V, ID = 15 A
10
ns
Rise Time
tr
VGS = 10 V
9
ns
Turn-off Delay Time
td(off)
RG = 10
26
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 20 V
17
nC
Gate to Source Charge
QGS
VGS = 10 V
3
nC
Gate to Drain Charge
QGD
ID = 30 A
6
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 30 A, VGS = 0 V
0.99
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V
23
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
14
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
相关PDF资料
PDF描述
2SK3991-ZK 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3991-ZK-E1 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3991-AZ 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK3992-ZK-E1 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3992 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
相关代理商/技术参数
参数描述
2SK3992-ZK-E1-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3992-ZK-E2-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3993-ZK-E1-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3993-ZK-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel
2SK3993-ZK-E2-AY 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件