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参数资料
| 型号： | 2SK4065-TL |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 75 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP-FD, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 44K |
| 代理商： | 2SK4065-TL |
2SK4065
No. A0324-5/5
PS
Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4065 | 100 A, 75 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4076-ZK-E1-AY | 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4090-ZK-E1-AY | 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4090(1)-S27-AY | 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4090-ZK-E1-AY | 64 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4066 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SK4066_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4066-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / NCH 4V DRIVE SERIES |
| 2SK4066-DL-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NCH 4V DRIVE SERIES 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
| 2SK4066-DL-1EX | 功能描述:MOSFET N-CH 60V TO263-2 制造商:on semiconductor 系列:- 包装:带卷（TR） 零件状态:停產 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:100A（Ta） 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷?（Qg）（最大值）:220nC @ 10V 不同 Vds 时的输入电容（Ciss）（最大值）:12500pF @ 20V FET 功能:- 功率耗散（最大值）:1.65W（Ta），90W（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:4.7 毫欧 @ 50A，10V 工作温度:150°C（TJ） 安装类型:表面贴装 供应商器件封装:TO-263-2 封装/外壳:TO-263-3，D2Pak（2 引线 + 接片），TO-263AB 标准包装:800 |
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