- 您现在的位置：买卖IC网 > PDF目录33505 > 2SK4067-TL (SANYO SEMICONDUCTOR CO LTD) 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SK4067-TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 49K |
| 代理商： | 2SK4067-TL |
2SK4067
No. A0565-4/4
PS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
Note on usage : Since the 2SK4067 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
2
10
3
7
5
0.01
23
5 7
2
0.01
0.1
35 7
2
1.0
35 7
2
10
35
IT11839
IT11837
IT11841
IT11840
0
20
40
0.4
0.2
60
1.0
0.8
0.6
80
100
120
1.2
140
160
Operation in this area
is limited by RDS(on).
100
s
1ms
10ms
ID=8A
IDP=32A
DC
operation
0
20
40
4
2
60
10
8
6
80
100
120
12
140
160
0
2
4
6
8
7
10
12
3
4
56
VDS=10V
ID=8A
100ms
≤10s
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
-
W
A S O
VGS -- Qg
PD -- Ta
PD -- Tc
Tc=25
°C
Single pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4069-ZK-E2-AY | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4070(1)-S27-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-ZK-E1-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4067-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 8A TO251 |
| 2SK4069-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4069-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。