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参数资料
| 型号： | 2SK4070(1)-S27-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | LEAD FREE, MP-3-B, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 266K |
| 代理商： | 2SK4070(1)-S27-AY |
Data Sheet D18785EJ2V0DS
3
2SK4070
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Percentage
of
Rated
P
o
wer
-
%
050
25
75
100
150
125
120
100
80
60
40
20
0
Tch - Channel Temperature -
°C
P
T
-
Total
P
o
wer
Diss
ipation
-
W
0
25
20
15
10
5
0
100
25
50
75
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
I
D
-
Drain
Current
-
A
0.01
0.1
1
10
100
1
10
100
1000
ID(pulse)
ID(DC)
RDS(on) Limited
(VGS = 10 V)
1
i m
i
s
PW
= 1
i
00 μ
s
Po
w
er
D
iss
ip
atio
n
Lim
ite
d
10 ms
TC = 25°C, Single
VDS - Drain to Source Voltage - V
I
D
-
Drain
Current
-
A
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(c
h
-A
)-
T
ransi
e
nt
Thermal
Resi
stance
-
°C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/Wi
Rth(ch-C) = 5.68
°C/Wi
Single pulse
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000
<R>
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PDF描述 |
|---|---|
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-ZK-E1-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4076-ZK-E1-AY | 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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