参数资料
型号: 2SK4076-ZK-E1-AY
元件分类: 小信号晶体管
英文描述: 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件页数: 2/8页
文件大小: 112K
代理商: 2SK4076-ZK-E1-AY
Data Sheet D18224EJ1V0DS
2
2SK4076
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 6 A
4.1
8.2
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 17.5 A
12
16
m
Ω
RDS(on)2
VGS = 4.5 V, ID = 8 A
18
25
m
Ω
Input Capacitance
Ciss
VDS = 10 V
1200
pF
Output Capacitance
Coss
VGS = 0 V
192
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
119
pF
Turn-on Delay Time
td(on)
VDD = 20 V
13
ns
Rise Time
tr
ID = 17.5 A
6
ns
Turn-off Delay Time
td(off)
VGS = 10 V
32
ns
Fall Time
tf
RG = 0
Ω
6
ns
Total Gate Charge
QG
VDD = 32 V
24
nC
Gate to Source Charge
QGS
VGS = 10 V
5
nC
Gate to Drain Charge
QGD
ID = 35 A
8
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 35 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
IF = 35 A, VGS = 0 V
27
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
23
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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