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参数资料
| 型号： | 2SK4082 |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 600 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 182K |
| 代理商： | 2SK4082 |
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MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 2.2
Ω MAX. (VGS = 10 V, ID = 1.8 A)
Low gate charge
QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4082-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±3.5
A
Drain Current (pulse)
Note1
ID(pulse)
±14
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation (TA = 25
°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
2
A
Single Avalanche Energy
Note2
EAS
240
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
2007
(Isolated TO-220)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4083U | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4083 | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4087LS | 14 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4091-ZK-E1-AY | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4091-ZK-E1-AY | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4082-S17-AY | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4084LS | 功能描述:MOSFET N-CH 500V 14A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4085LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4085LS_0710 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4085LS_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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