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参数资料
| 型号： | 2SK4092-A |
| 元件分类： | JFETs |
| 英文描述： | 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 192K |
| 代理商： | 2SK4092-A |
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MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18776EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 0.4
Ω MAX. (VGS = 10 V, ID = 10 A)
Low gate charge
QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4092-A
Note
Sn-Ag-Cu
100 p/package
TO-3P (MP-88) typ. 5.0 g
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±21
A
Drain Current (pulse)
Note1
ID(pulse)
±60
A
Total Power Dissipation (TC = 25
°C)
PT1
200
W
Total Power Dissipation (TA = 25
°C)
PT2
3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
21
A
Single Avalanche Energy
Note2
EAS
29.4
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-3P)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4092-A | 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4095-T-AZ | 0.5 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4098LS | 7 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4098LS | 7 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4119LS | 21 A, 400 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4093 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4093TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin TO-92 Mod Box 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 1A TO-92 |
| 2SK4094 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4094_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4094-1E | 功能描述:MOSFET N-CH 60V 100A TO220-3 制造商:on semiconductor 系列:- 包装:管件 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:逻辑电平栅极，4V 驱动 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:100A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:5 毫欧 @ 50A，10V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:220nC @ 10V 不同 Vds 时的输入电容（Ciss）:12500pF @ 20V 功率 - 最大值:1.75W 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220-3 标准包装:50 |
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