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参数资料
| 型号： | 2SK4144-S12-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 215K |
| 代理商： | 2SK4144-S12-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK4144
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D19413EJ2V0DS00 (2nd edition)
Date Published October 2008 NS
Printed in Japan
2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4144-AZ
Note
Vinyl bag 200 p/bag
2SK4144-S12-AZ
Note
Sn-Ag-Cu
Tube 50 p/tube
Isolated TO-220 typ. 2.2 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
Low on-state resistance
RDS(on)1 = 5.8 m
Ω MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 7.3 m
Ω MAX. (VGS = 4.5 V, ID = 35 A)
Low input capacitance
Ciss = 5500 pF TYP. (VDS = 10 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±70
A
Drain Current (pulse)
Note1
ID(pulse)
±280
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation (TA = 25
°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Repetitive Avalanche Current
Note2
IAR
49.5
A
Repetitive Avalanche Energy
Note2
EAR
245
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Tch
≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
3.57
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
62.5
°C/W
(Isolated TO-220)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4144-S12-AZ | 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4147-T2B-AT | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4151TZ-E | 150 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 |
| 2SK4183 | 13 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4193LS | 4.3 A, 450 V, 1.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4145 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK4146 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4146-S19-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4147 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Old Company Name in Catalogs and Other Documents |
| 2SK4147-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SWITCHING N-CHANNEL MOSFET |
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