参数资料
型号: 2SK4145-S19-AY
元件分类: JFETs
英文描述: 84 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, TO-220, 3 PIN
文件页数: 1/5页
文件大小: 193K
代理商: 2SK4145-S19-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4145
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18760EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on) = 10 m
Ω MAX. (VGS = 10 V, ID = 42 A)
Low input capacitance
Ciss = 5300 pF TYP.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4145-S19-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
TO-220 typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±84
A
Drain Current (pulse)
Note1
ID(pulse)
±215
A
Total Power Dissipation (TC = 25
°C)
PT1
84
W
Total Power Dissipation (TA = 25
°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
32
A
Single Avalanche Energy
Note2
EAS
102
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.49
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
相关PDF资料
PDF描述
2SK4145-S19-AY 84 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4197FG POWER, FET, TO-220AB
2SK4198FS 4 A, 600 V, 2.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4202-S19-AY 84 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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