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参数资料
| 型号： | 2SK4147-T2B-AT |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, MINIMOLD, SC-96, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 260K |
| 代理商： | 2SK4147-T2B-AT |
Data Sheet D18741EJ1V0DS
2
2SK4147
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.9
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 0.25 A
0.55
S
RDS(on)1
VGS = 10 V, ID = 0.25 A
3.6
4.5
Ω
RDS(on)2
VGS = 4.5 V, ID = 0.25 A
3.6
5.2
Ω
Drain to Source On-state Resistance
Note
RDS(on)3
VGS = 4 V, ID = 0.25 A
3.6
6.0
Ω
Input Capacitance
Ciss
VDS = 10 V,
120
pF
Output Capacitance
Coss
VGS = 0 V,
18
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 0.25 A,
5.5
ns
Rise Time
tr
VGS = 10 V,
6
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
16.5
ns
Fall Time
tf
32
ns
Total Gate Charge
QG
VDD = 200 V,
5.5
nC
Gate to Source Charge
QGS
VGS = 10 V,
1
nC
Gate to Drain Charge
QGD
ID = 0.5 A
2
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.84
1.5
V
Reverse Recovery Time
trr
IF = 0.5 A, VGS = 0 V,
55
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
54
nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
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