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参数资料
| 型号： | 2SK4147-T2B-AT |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, MINIMOLD, SC-96, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 151K |
| 代理商： | 2SK4147-T2B-AT |
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MOS FIELD EFFECT TRANSISTOR
2SK4147
SWITCHING
N-CHANNEL MOSFET
DATA SHEET
Document No. D18741EJ1V0DS00 (1st edition)
Date Published April 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The 2SK4147 is a switching element that is most suitable for use
in DC-DC converter whose DC input voltage is 24 to 48 V.
Having low on-resistance, excelling in the switching characteristics,
and providing the small surface mounting outline, the 2SK4147 is
ideal for use in high-speed switching of the devices on which
space-saving and automation of mounting are promoted.
FEATURES
Low input capacitance
Ciss = 120 pF TYP.
Low on-state resistance
RDS(on)1 = 4.5
Ω MAX. (VGS = 10 V, ID = 0.25 A)
RDS(on)2 = 5.2
Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)3 = 6.0
Ω MAX. (VGS = 4 V, ID = 0.25 A)
4.5 V drive available
Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4147-T1B-AT
Note
2SK4147-T2B-AT
Note
Pure Sn (Tin)
Tape 3000 p/reel
SC-96 (Mini Mold Thin Type)
0.011 g TYP.
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: XR
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25
°C)
ID(DC)
±0.5
A
Drain Current (pulse)
Note1
ID(pulse)
±2.0
A
Total Power Dissipation (TA = 25
°C)
PT1
0.2
W
Total Power Dissipation (TA = 25
°C)
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t
≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8
±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1 –0.15
1. Gate
2. Source
3. Drain
2
1
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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PDF描述 |
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| 2SK4171 | 100 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4179GS | 80 A, 75 V, 0.0137 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK415 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:HIGH SPEED POWER SWITCHING |
| 2SK4150 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4150TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.4A 3-Pin TO-92 T/R 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 0.4A TO-92 |
| 2SK4151 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4151TZ-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 150V 1A TO-92 |
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