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参数资料
| 型号： | 2SK4177 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 58K |
| 代理商： | 2SK4177 |
2SK4177
No. A0869-1/5
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
4
A
Allowable Power Dissipation
PD
1.65
W
Tc=25°C80
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
42
mJ
Avalanche Current *2
IAV
2A
*1 VDD=99V, L=20mH, IAV=2A
*2 L≤20mH, single pulse
Marking : K4177
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0869
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
31208QB TI IM TC-00001270
SANYO Semiconductors
DATA SHEET
2SK4177
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SS-MDP1-T1-B4-M2RE | TOGGLE SWITCH, DPDT, LATCHED, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
| 2S1-MDP2-T2-B8-M7RE | TOGGLE SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE |
| 2S1-MDP2-T3-B3-M6QE | TOGGLE SWITCH, DPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-RIGHT ANGLE |
| 2S1-MSP2-T3-B7-VS21QE | TOGGLE SWITCH, SPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-STRAIGHT |
| 2S1-MSP2-T3-B8-M7GE | TOGGLE SWITCH, SPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-RIGHT ANGLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4177_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4177-DL-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-DL-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4177-DL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-E | 功能描述:MOSFET N-CH 1500V 2A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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