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参数资料
| 型号： | 2SK4178(1)-S27-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | LEAD FREE, TO-251, MP-3-B, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 215K |
| 代理商： | 2SK4178(1)-S27-AY |
Data Sheet D19080EJ1V0DS
3
2SK4178
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
ercentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
TC - Case Temperature -
°C
P
T-
Total
Power
Dissipati
on
-
W
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
I
D
-
Drain
Cur
rent
-
A
0.1
1
10
100
1000
0.1
1
10
100
ID(pulse)
ID(DC)
1i0 m
i
s
TC = 25
°C
Single pulse
1i m
i
s
Po
we
r D
iss
ipa
tio
n L
im
ite
d
RD
S(on)
Limi
ted
(V
GS
= 1
i 0
V)
PW
= 1
i
00
μs
VDS - Drain to Source Voltage - V
I
D
-
Drain
Cur
rent
-
A
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t)
-
Transient
Therm
al
Resistance
-
°C/W
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/W
Single pulse
Rth(ch-C) = 3.8
°C/W
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4178-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4178-ZK-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4178-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4179 | 制造商:SANYO 功能描述:MOSFET, N CH, 75V, 80A, TO-220AA Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 75V 80A TO-220AA 制造商:Sanyo 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 |
| 2SK4179GS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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