参数资料
型号: 2SK4183
元件分类: JFETs
英文描述: 13 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ZP, 3 PIN
文件页数: 4/4页
文件大小: 55K
代理商: 2SK4183
2SK4183
No. A1009-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
A S O
VGS -- Qg
0
25
50
75
100
125
150
100
80
60
20
40
120
175
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
IT10478
Ambient Temperature, Ta --
°C
IT13137
0
20
40
60
80
100
120
100
140
160
80
60
40
20
PD -- Tc
Allowable
Power
Dissipation,
P
D
-
W
Case Tamperature, Tc --
°C
2
3
5
7
2
1.0
3
5
7
10
2
3
5
7
100
0.1
23
5 7
2
0.1
1.0
35 7
2
10
35 7
2
100
1000
35 7
IT13147
IT13146
Operation in this area
is limited by RDS(on).
10
μs
100
μs
1ms
10ms
IDP=52A
DC
operation
0
1
2
3
4
5
6
7
8
40
10
9
10
20
30
VDS=200V
ID=13A
100ms
ID=13A
PW
≤10μs
Tc=25
°C
Single pulse
Drain
Current,
I
D
-
A
Note on usage : Since the 2SK4183 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of January, 2008. Specifications and information herein are subject
to change without notice.
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