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参数资料
| 型号： | 2SK4212-ZK-E1-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 148K |
| 代理商： | 2SK4212-ZK-E1-AY |
Data Sheet D19564EJ1V0DS
2
2SK4212
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±16 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
1.5
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 5 V, ID = 12 A
10
22
S
RDS(on)1
VGS = 10 V, ID = 30 A
5.5
7.8
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 20 A
8.5
14
m
Ω
Input Capacitance
Ciss
VDS = 15 V,
1200
pF
Output Capacitance
Coss
VGS = 0 V,
220
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
140
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 30 A,
16
ns
Rise Time
tr
VGS = 10 V,
14
ns
Turn-off Delay Time
td(off)
RG = 3
Ω
45
ns
Fall Time
tf
11
ns
Total Gate Charge
QG
VDD = 15 V,
27
nC
Gate to Source Charge
QGS
VGS = 10 V,
4
nC
Gate to Drain Charge
QGD
ID = 30 A
7
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 30 A, VGS = 0 V
0.88
1.5
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V,
26
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
14
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
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| 2SK4213A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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| 2SK4221 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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