- 您现在的位置：买卖IC网 > PDF目录30623 > 2SK4212-ZK-E2-AY 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF资料下载
参数资料
| 型号： | 2SK4212-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 148K |
| 代理商： | 2SK4212-ZK-E2-AY |
Data Sheet D19564EJ1V0DS
4
2SK4212
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Tr
ansfer
A
dmittance
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 5 V
Pulsed
75
°C
25
°C
55°C
TA = 150
°C
ID - Drain Current - A
R
DS(on)
-Drai
nto
S
ource
On-state
Res
istanc
e-
m
Ω
0
5
10
15
20
0.1
1
10
100
1000
Pulsed
10 V
VGS = 4.5 V
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
-Drain
to
S
ource
On-state
Resi
stanc
e-
m
Ω
0
5
10
15
20
0
5
10
15
20
ID = 30 A
Pulsed
VGS - Gate to Source Voltage - V
R
DS(on)
-Drain
to
S
ource
On-state
Resi
stanc
e-
m
Ω
0
5
10
15
-75
-25
25
75
125
175
Pulsed
10 V, 30 A
VGS = 4.5 V, ID = 20 A
Tch - Channel Temperature -
°C
CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
10
100
1000
10000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
V
GS
-
G
ate
to
Source
Vol
tag
e-
V
0
2
4
6
8
10
0
5
10
15
20
25
30
ID = 30 A
VDD = 5 V
15 V
20 V
QG - Gate Charge - nC
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4212-ZK-E2-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4212-ZK-E1-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4212-ZK-E2-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4221 | 26 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK433-12-1B | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4213A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4213A-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK4213A-ZK-E1-AY NCH ENHANCEMENT-TYP |
| 2SK4213A-ZK-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK422 | 制造商:n/a 功能描述:2SK422 N9H1C |
| 2SK4221 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。