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参数资料
| 型号： | 2SK4212-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 148K |
| 代理商： | 2SK4212-ZK-E2-AY |
Data Sheet D19564EJ1V0DS
3
2SK4212
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
dT
-
Percentage
of
Rated
P
ower
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125 150
175
TC - Case Temperature -
°C
I
D
-
Dr
ai
nCurr
ent
-
A
0.1
1
10
100
1000
0.01
0.1
1
10
100
ID(pulse)
ID(DC)
TC = 25
°C
Single Pulse
R
D
S(
on
) L
im
ite
d
(V
G
S
=
1i0
V
)
PW
=
1
i
00
μs
1 ms
10 ms
DC
Po
we
r D
iss
ipa
tio
n L
im
ite
d
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t
)-
T
ransi
ent
Thermal
Resi
stance
-
°C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/W
Single Pulse
Rth(ch-C) = 3.57
°C/W
PW - Pulse Width - s
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
I
D
-
Drain
Current
-
A
0
10
20
30
0
123
45
VDS = 10 V
Pulsed
TA = 125
°C
75
°C
25
°C
55°C
VGS - Gate to Source Voltage - V
V
GS(t
h)
-
G
ate
to
S
our
ce
T
hreshold
V
oltage
-
V
0
1
2
3
4
-75
-25
25
75
125
175
VDS = VGS
ID = 250
μA
Tch - Channel Temperature -
°C
100
μ
1 m
10 m
100 m
1
10
100
1000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4213A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4213A-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK4213A-ZK-E1-AY NCH ENHANCEMENT-TYP |
| 2SK4213A-ZK-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK422 | 制造商:n/a 功能描述:2SK422 N9H1C |
| 2SK4221 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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