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参数资料
| 型号： | 2SK4212-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 252K |
| 代理商： | 2SK4212-ZK-E2-AY |
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SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4212
Document No. D19564EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
2008
DESCRIPTION
The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 7.8 m
Ω MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 14 m
Ω MAX. (VGS = 4.5 V, ID = 20 A)
Low total gate charge
QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4212-ZK-E1-AY
Note
2SK4212-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±48
A
Drain Current (pulse)
Note1
ID(pulse)
±144
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
17
A
Single Avalanche Energy
Note2
EAS
28.9
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4221 | 26 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK433-12-1B | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK433-12-1E | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK435E | SMALL SIGNAL, FET, TO-92 |
| 2SK435D | SMALL SIGNAL, FET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4213A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4213A-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK4213A-ZK-E1-AY NCH ENHANCEMENT-TYP |
| 2SK4213A-ZK-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK422 | 制造商:n/a 功能描述:2SK422 N9H1C |
| 2SK4221 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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