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参数资料
| 型号： | 2SK435 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 22 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | TO-92(2), 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 45K |
| 代理商： | 2SK435 |
2SK435
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
22
V
Gate to source voltage
V
GSO
–22
V
Drain current
I
D
100
mA
Gate current
I
G
10
mA
Channel power dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to source breakdown
voltage
V
(BR)GSS
–22
—
V
I
G = –10 A, VDS = 0
Gate cutoff current
I
GSS
—
–10
nA
V
GS = –15 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
—
–2.5
V
DS = 5 V, ID = 10 A
Drain current
I
DSS*
1
6
—
40
mA
V
DS = 5 V, VGS = 0, Pulse test
Forward transfer admittance
fs
y
20
—
mS
V
DS = 5 V, ID = 10 mA,
f = 1kHz
Input capacitance
Ciss
—
9.0
11.0
pF
V
DS = 5 V, VGS = 0,
f = 1MHz
Reverse transfer capacitance
Crss
—
2.8
4.0
pF
V
DS = 5 V, VGS = 0,
f = 1MHz
Noise figure
NF
—
0.5
3.0
dB
V
DS = 5 V, ID = 1 mA,
f = 1kHz, Rg = 1k
Note:
1. The 2SK435 is grouped by I
DSS as follows.
Grade
B
C
D
E
I
DSS
6 to 14
12 to 22
18 to 30
26 to 40
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK439E | RF SMALL SIGNAL, FET |
| 2SK439 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK439D | RF SMALL SIGNAL, FET |
| 2SK439F | RF SMALL SIGNAL, FET |
| 2SK439FRR | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK435B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 14MA I(DSS) | TO-92 |
| 2SK435C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 22MA I(DSS) | TO-92 |
| 2SK435CTZ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel Junction FET |
| 2SK435D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 30MA I(DSS) | TO-92 |
| 2SK435D(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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