参数资料
型号: 2SK490
元件分类: JFETs
英文描述: 10 A, 400 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 6/6页
文件大小: 3341K
代理商: 2SK490
2SD755, 2SD756, 2SD756A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD755
2SD756
2SD756A
Unit
Collector to base voltage
V
CBO
100
120
140
V
Collector to emitter voltage
V
CEO
100
120
140
V
Emitter to base voltage
V
EBO
55
5V
Collector current
I
C
50
mA
Collector power dissipation
P
C
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
100
120
140
V
I
C = 1 mA,
R
BE = ∞
Collector to base
breakdown voltage
V
(BR)CBO
100
120
140
V
I
C = 10 A, IE = 0
Collector cutoff current
I
CBO
0.5
0.5
0.5
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
250
1200 250
800
250
500
V
CE = 12 V,
I
C = 2 mA
h
FE2
125
125
125
V
CE = 12 V,
I
C = 10 mA
Base to emitter voltage
V
BE
0.75
0.75
0.75
V
CE = 12 V,
I
C = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2
0.2
0.2
V
I
C = 10 mA,
I
B = 1 mA
Gain bandwidth product f
T
350
350
350
MHz V
CE = 12 V,
I
C = 5 mA
Collector output
capacitance
Cob
1.6
1.6
1.6
pF
V
CB = 25 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD755, 2SD756 and 2SD756A are grouped by h
FE1 as follows.
DE
F
2SD755
250 to 500
400 to 800
600 to 1200
2SD756
250 to 500
400 to 800
2SD756A
250 to 500
相关PDF资料
PDF描述
2SK492-T12-1E N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
2SK492-T12-1D N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
2SK492-12-1C N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
2SK494C SMALL SIGNAL, FET
2SK494D SMALL SIGNAL, FET
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