参数资料
型号: 2SK65Q
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 2 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: NS-B1, 3 PIN
文件页数: 1/3页
文件大小: 197K
代理商: 2SK65Q
241
Silicon Junction FETs (Small Signal)
unit: mm
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
1: Drain
2: Gate
3: Source
NS-B1 Package
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
VDSO
VGDO
IDSO
IDGO
IGSO
PD
Topr
Tstg
Ratings
12
2
20
10 to +70
20 to +150
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Symbol
IDSS*
gm
NV
GV1*
GV2*
GV3*
Conditions
VDS = 4.5V, VGS = 0, RS = 2.2k
± 1%
VDS = 4.5V, VGS = 0
RS = 2.2k ± 1%, f = 1kHz
VDS = 4.5V, RS = 2.2k
± 1%
CG = 10pF, A-curve
VDS = 4.5V, RS = 2.2k ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 12V, RS = 2.2k
± 1%
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 1V, RS = 2.2k
± 1%
CG = 10pF, eG = 100mV, f = 70Hz
min
0.04
300
max
0.8
4
Unit
mA
S
V
dB
* IDSS rank classification and GV value
typ
500
10
9.5
11
Runk
IDSS (mA)
GV1 (dB)
GV2 (dB)
| G
V1 GV2 | (dB)
P
0.04 to 0.2
>
13
>
12
< 3
Q
0.15 to 0.8
>
12
>
11
< 3
Note) The part number in the parenthesis shows conventional part number.
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
23
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)
15.6
±0.5
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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