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参数资料
| 型号： | 2SK660-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SST, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 199K |
| 代理商： | 2SK660-A |
Data Sheet D10753EJ2V0DS
3
2SK660
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
300
400
500
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
100
0
10
02
4
6
8
0.05 V
0.15 V
0.10 V
0.05 V
0.10 V
0.15 V
0.20 V
0.30 V
VGS = 0 V
0.25 V
VGS - Gate to Source Voltage - V
IG
-
Gate
Current
-
A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
20
10
40
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
0.4
0.2
0
0.2
0.4
0.2
0.6
0.4
0.8
1.0
VDS = 5 V
INPUT AND FEEDBACK CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
VDS - Drain to Source Voltage - V
C
iSS
,C
OSS
-
Capacitance
-
pF
3
5
8
10
1
2
15
2
CISS
COSS
VDS = 0 V
f = 1.0 kHz
TA - Ambient Temperature - C
P
T
-Total
Power
Dissipation
-
mW
0
306090
150
120
180
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
FORWARD TRANSFER ADMITTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
|y
fs
|-
Forward
Transfer
Admittance
-
mS
3.0
2.5
2.0
1.5
1.0
0.5
0
0.4
0.2
0.3
0.1
0
0.2
0.4
0.1
0.3
VDS = 5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK662-R |
| 2SK662-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK663 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification |
| 2SK664 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Switching |
| 2SK665 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
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