- 您现在的位置：买卖IC网 > PDF目录33507 > 2SK715 (SANYO SEMICONDUCTOR CO LTD) 50 mA, 15 V, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | 2SK715 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 15 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SPA, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 90K |
| 代理商： | 2SK715 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
AM Tuner, RF Amplifier Applications
Ordering number:EN2543
2SK715
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/4237TA, TS No.2543–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2034A
[2SK715]
Applications
AM tuner RF amp, low-noise amp.
HF low-noise amp.
Features
Adoption of FBET process.
Large
y
fs.
Small Ciss.
Very low noise figure.
C
Electrical Characteristics at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : SPA
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
5
1V
e
g
a
t
l
o
V
n
i
a
r
D
-
o
t
-
e
t
a
GV
S
D
G
5
1
–V
t
n
e
r
u
C
e
t
a
GIG
0
1A
m
t
n
e
r
u
C
n
i
a
r
DID
0
5A
m
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
0
3W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
5
2
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
5
2
1
+
o
t
5
–
* : The 2SK715 is classified by IDSS as follows : (unit : mA).
5
.
8
T
0
.
50
.
2
1
U
3
.
70
.
7
1
V
0
.
0
10
.
4
2
W
5
.
4
1
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
12
3
2.2
0.4
1.3
3.0
3.8nom
0.7
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
n
i
a
r
D
-
o
t
-
e
t
a
GV
S
D
G
)
R
B
(
IG
V
,
A
0
1
–
=
S
D
0
=5
1
–V
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
r
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
0
1
–
=
S
D
0
=0
.
1
–A
n
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
-
o
r
e
ZI
S
D
*V S
D
V
,
V
5
=
S
G
0
=*
0
.
5*
0
.
4
2A
m
e
g
a
t
l
o
V
f
o
t
u
CV
)
f
o
(
S
G
V S
D
I
,
V
5
=
D
A
0
1
=6
.
0
–4
.
1
–V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
V
,
V
5
=
S
G
z
H
k
1
=
f
,
0
=5
20
5S
m
e
c
n
a
t
i
c
a
p
a
C
t
u
p
n
Is
s
i
CV S
D
V
,
V
5
=
S
G
z
H
k
1
=
f
,
0
=0
1F
p
e
c
n
a
t
i
c
a
p
a
C
r
e
f
s
n
a
r
T
e
s
r
e
v
e
Rs
s
r
CV S
D
V
,
V
5
=
S
G
z
H
k
1
=
f
,
0
=0
.
3F
p
e
r
u
g
i
F
e
s
i
o
NF
NV S
D
k
1
=
g
R
,
V
5
=
I
, D
z
H
k
1
=
f
,
A
m
1
=5
.
1B
d
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK719 | 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK724 | 10 A, 500 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P |
| 2SK736 | 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK739-Z | 2 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK755 | 5 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK715_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:AM Tuner, RF Amplifier Applications |
| 2SK715T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 5MA I(DSS) | SPAK |
| 2SK715U | 功能描述:MOSFET J-FET N-CH 50V 15MA SPA RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK715U-AC | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK715V | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。